Christopher G. Morgan*, Patrick P. Naulleau**, Senajith B. Rekawa**, Paul E. Denham**, Brian H. Hoef**, Michael S. Jones**, and Ronald Vane*, *XEI Scientific, Inc., 1755 E. Bayshore Blvd., Redwood City, CA, **Center for X-Ray Optics (CXRO), Lawrence Berkeley National Laboratory, Berkeley, CA
Poster Presentation at SPIE Advanced Lithography Conference, February 2010, San Jose, CA
The problem of carbon contamination on extreme ultraviolet (EUV) optics, causing unacceptably low reflectivity in mirrors, must be solved before industry will adopt the technology on a production scale. The quantity of oxygen radicals produced by the low-power downstream plasma cleaner is sufficient to remove contamination from EUV optics as demonstrated by the experiments. Additionally, EUV reflectance measurements show that this method of cleaning optics does not reduce the reflectivity of the optic through formation of an oxide on the capping layer of the optic.